skip to main content

Title: Modeling direct interband tunneling. I. Bulk semiconductors

Interband tunneling is frequently studied using the semiclassical Kane model, despite uncertainty about its validity. Revisiting the physical basis of this formula, we find that it neglects coupling to other bands and underestimates transverse tunneling. As a result, significant errors can arise at low and high fields for small and large gap materials, respectively. We derive a simple multiband tunneling model to correct these defects analytically without arbitrary parameters. Through extensive comparison with band structure and quantum transport calculations for bulk InGaAs, InAs, and InSb, we probe the accuracy of the Kane and multiband formulas and establish the superiority of the latter. We also show that the nonlocal average electric field should be used when applying either of these models to nonuniform potentials. Our findings are important for efficient analysis and simulation of bulk semiconductor devices involving tunneling.
Authors:
 [1] ;  [1] ;  [2]
  1. Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90095 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22314569
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ACCURACY; COMPARATIVE EVALUATIONS; ELECTRIC FIELDS; GALLIUM ARSENIDES; INDIUM ANTIMONIDES; INDIUM ARSENIDES; SEMICLASSICAL APPROXIMATION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SIMULATION; TUNNEL EFFECT