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Title: Thermal analysis of an indirectly heat pulsed non-volatile phase change material microwave switch

We show the finite element simulation of the melt/quench process in a phase change material (GeTe, germanium telluride) used for a radio frequency switch. The device is thermally activated by an independent NiCrSi (nickel chrome silicon) thin film heating element beneath a dielectric separating it electrically from the phase change layer. A comparison is made between the predicted and experimental minimum power to amorphize (MPA) for various thermal pulse powers and pulse time lengths. By including both the specific heat and latent heat of fusion for GeTe, we find that the MPA and the minimum power to crystallize follow the form of a hyperbola on the power time effect plot. We also find that the simulated time at which the entire center GeTe layer achieves melting accurately matches the MPA curve for pulse durations ranging from 75–1500 ns and pulse powers from 1.6–4 W.
Authors:
; ; ; ; ; ; ;  [1]
  1. Northrop Grumman Corp., Electronic Systems, P.O. Box 1521, Baltimore, Maryland 21203 (United States)
Publication Date:
OSTI Identifier:
22314566
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPARATIVE EVALUATIONS; DIAGRAMS; DIELECTRIC MATERIALS; FINITE ELEMENT METHOD; FUSION HEAT; GERMANIUM; GERMANIUM TELLURIDES; MELTING; MICROWAVE RADIATION; NICKEL; PHASE CHANGE MATERIALS; RADIOWAVE RADIATION; SILICON; SIMULATION; SPECIFIC HEAT; SWITCHES; THERMAL ANALYSIS; THIN FILMS