Impact of thermal stress on the piezoelectric and dielectric properties of PbTiO{sub 3} thick films on various substrates
- College of Electronic Science and Engineering and Microelectronic Information Functional Materials and Devices Research Center, Nanjing University of Posts and Telecommunications, Nanjing 210046 (China)
- Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)
- College of Electronic and information Engineering, Hebei University, Baoding 071002 (China)
The impact of thermal stress on the polarization, as well as dielectric and piezoelectric properties of (001) oriented PbTiO{sub 3} (PTO) thick films deposited on various substrates was investigated based on Landau-Devonshire thermodynamic model. The results showed that dielectric and piezoelectric properties of PTO films depend strongly on the thermal stress in PTO films decided by the deposition temperature T{sub G} and the thermal expansion coefficients' difference between PTO films and substrates. For IC-compatible substrates such as Si, c-sapphire, and a-sapphire that induce tensile in-plane thermal stresses, the dielectric and piezoelectric responses and tunabilities of PTO films were enhanced. Whereas for PTO films on MgO, compressive thermal in-plane stresses can degraded the dielectric and piezoelectric responses and tunabilities of the films.
- OSTI ID:
- 22314560
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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