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Title: Laser damage in silicon: Energy absorption, relaxation, and transport

Silicon irradiated with an ultrashort 800 nm-laser pulse is studied theoretically using a two temperature description that considers the transient free carrier density during and after irradiation. A Drude model is implemented to account for the highly transient optical parameters. We analyze the importance of considering these density-dependent parameters as well as the choice of the Drude collision frequency. In addition, degeneracy and transport effects are investigated. The importance of each of these processes for resulting calculated damage thresholds is studied. We report damage thresholds calculations that are in very good agreement with experimental results over a wide range of pulse durations.
Authors:
;  [1] ;  [2]
  1. Department of Physics and Research Center OPTIMAS, University of Kaiserslautern, 67663 Kaiserslautern (Germany)
  2. Faculty of Physics, University of Duisburg-Essen and CeNIDE, 47048 Duisburg (Germany)
Publication Date:
OSTI Identifier:
22314537
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER DENSITY; COLLISIONS; DAMAGE; DENSITY; ENERGY ABSORPTION; IRRADIATION; LASERS; PULSES; RELAXATION; SILICON; TRANSIENTS