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Title: Semi-shunt field emission in electronic devices

We introduce a concept of semi-shunts representing needle shaped metallic protrusions shorter than the distance between a device electrodes. Due to the lightening rod type of field enhancement, they induce strong electron emission. We consider the corresponding signature effects in photovoltaic applications; they are: low open circuit voltages and exponentially strong random device leakiness. Comparing the proposed theory with our data for CdTe based solar cells, we conclude that stress can stimulate semi-shunts' growth making them shunting failure precursors. In the meantime, controllable semi-shunts can play a positive role mitigating the back field effects in photovoltaics.
Authors:
 [1] ;  [2]
  1. Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States)
  2. Department of Radiation Oncology, University of Toledo, Toledo, Ohio 43606 (United States)
Publication Date:
OSTI Identifier:
22314526
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; BYPASSES; CADMIUM TELLURIDES; ELECTRODES; ELECTRON EMISSION; ELECTRONIC EQUIPMENT; FIELD EMISSION; PHOTOVOLTAIC EFFECT; SOLAR CELLS