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Title: Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

Dramatic reduction of thermal resistance was achieved in AlGaN/GaN Multi-Mesa-Channel (MMC) high electron mobility transistors (HEMTs) on sapphire substrates. Compared with the conventional planar device, the MMC HEMT exhibits much less negative slope of the I{sub D}-V{sub DS} curves at high V{sub DS} regime, indicating less self-heating. Using a method proposed by Menozzi and co-workers, we obtained a thermal resistance of 4.8 K-mm/W at ambient temperature of ∼350 K and power dissipation of ∼9 W/mm. This value compares well to 4.1 K-mm/W, which is the thermal resistance of AlGaN/GaN HEMTs on expensive single crystal diamond substrates and the lowest reported value in literature.
Authors:
; ;  [1] ;  [2]
  1. Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, Sapporo (Japan)
  2. (JST), CREST, 102-0075 Tokyo (Japan)
Publication Date:
OSTI Identifier:
22314522
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; ELECTRON MOBILITY; GALLIUM NITRIDES; MONOCRYSTALS; SAPPHIRE; TRANSISTORS