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Title: Alignment of the diamond nitrogen vacancy center by strain engineering

The nitrogen vacancy (NV) center in diamond is a sensitive probe of magnetic field and a promising qubit candidate for quantum information processing. The performance of many NV-based devices improves by aligning the NV(s) parallel to a single crystallographic direction. Using ab initio theoretical techniques, we show that NV orientation can be controlled by high-temperature annealing in the presence of strain under currently accessible experimental conditions. We find that (89 ± 7)% of NVs align along the [111] crystallographic direction under 2% compressive biaxial strain (perpendicular to [111]) and an annealing temperature of 970 °C.
Authors:
 [1] ;  [2] ;  [1] ;  [3]
  1. Department of Physics, University of Washington, Seattle, Washington 98195 (United States)
  2. Department of Electrical Engineering, University of Washington, Seattle, Washington 98195 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22314506
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRYSTAL STRUCTURE; DIAMONDS; ENGINEERING; GRAIN ORIENTATION; NITROGEN; QUANTUM INFORMATION; STRAINS; VACANCIES