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Title: Optical detection of spin-filter effect for electron spin polarimetry

We have monitored the cathodoluminescence (CL) emitted upon injection of free electrons into a hybrid structure consisting of a thin magnetic Fe layer deposited on a p-GaAs substrate, in which InGaAs quantum wells are embedded. Electrons transmitted through the unbiased metal/semiconductor junction recombine radiatively in the quantum wells. Because of the electron spin-filtering across the Fe/GaAs structure, the CL intensity, collected from the backside, is found to depend on the relative orientation between the injected electronic spin polarization and the Fe layer magnetization. The spin asymmetry of the CL intensity in such junction provides a compact optical method for measuring spin polarization of free electrons beams or of hot electrons in solid-state devices.
Authors:
; ; ; ; ;  [1] ;  [2] ;  [3]
  1. Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique - CNRS, 91128 Palaiseau Cedex (France)
  2. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation)
  3. (Russian Federation)
Publication Date:
OSTI Identifier:
22314493
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CATHODOLUMINESCENCE; ELECTRONS; GALLIUM ARSENIDES; INDIUM ARSENIDES; IRON; POLARIMETRY; QUANTUM WELLS; SEMICONDUCTOR JUNCTIONS; SPIN; SPIN ORIENTATION