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Title: High-performance chemical-bath deposited CdS thin-film transistors with ZrO{sub 2} gate dielectric

We demonstrate high performance chemical bath deposited CdS thin-film transistors (TFTs) using atomic layer deposited ZrO{sub 2} based high-k gate dielectric material. Our unique way of isolation of the CdS-based TFTs devices yielded significantly low leakage current as well as remarkable lower operating voltages (<5 V) which is four times smaller than the devices reported on CdS-based TFTs using SiO{sub 2} gate dielectric. Upon thermal annealing, the devices demonstrate even higher performance, including μ{sub FE} exceeding 4 ± 0.2 cm{sup 2} V{sup −1}S{sup −1}, threshold voltage V{sub T} of 3.8 V, and I{sub on-off} of 10{sup 4}–10{sup 5}, which hold much promise for applications in future electronic and optical devices.
Authors:
; ; ; ;  [1]
  1. Center for Materials Research, Norfolk State University, 700 Park Avenue, Norfolk, Virginia 23504 (United States)
Publication Date:
OSTI Identifier:
22314489
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM SULFIDES; DEPOSITION; DEPOSITS; DIELECTRIC MATERIALS; JUNCTION TRANSISTORS; LEAKAGE CURRENT; SILICON OXIDES; THIN FILMS; ZIRCONIUM OXIDES