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Title: Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5× lower effective mass for s-InSb compared to s-Ge quantum well at 1.9 × 10{sup 12} cm{sup –2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSb for future technology node.
Authors:
; ; ;  [1] ; ; ; ; ;  [2] ; ; ;  [3] ;  [4]
  1. Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  2. Taiwan Semiconductor Manufacturing Company, Hsinchu 30078, Taiwan (China)
  3. IQE, Inc., Bethlehem, Pennsylvania 18015 (United States)
  4. Lake Shore Cryotronics, Westerville, Ohio 43082 (United States)
Publication Date:
OSTI Identifier:
22314486
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; GERMANIUM; HOLES; INDIUM ANTIMONIDES; PHONONS; QUANTUM WELLS; SCATTERING; SEMICONDUCTOR JUNCTIONS; STRAINS