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Title: X-ray analysis of strain distribution in two-step grown epitaxial SrTiO{sub 3} thin films

Epitaxial SrTiO{sub 3} (STO) thin films were grown on (001)-oriented LaAlO{sub 3} (LAO) substrates using a two-step growth method by ion beam sputter deposition. An STO buffer layer was initially grown on the LAO substrate at a low temperature of 150 °C prior to growing the STO main layer at 750 °C. The thickness of the STO buffer layer was varied at 3, 6, and 10 nm, while the total film thickness was kept constant at approximately 110 nm. According to x-ray structural analysis, we show that the STO buffer layer plays an essential role in controlling the strain in the STO layer grown subsequently. It is found that the strains in the STO films are more relaxed with an increase in buffer layer thickness. Moreover, the strain distribution in two-step grown STO films becomes more homogeneous across the film thickness when compared to that in directly grown STO film.
Authors:
 [1] ;  [2] ;  [1] ;  [3]
  1. Department of Materials, Physics and Energy Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
  2. Materials and Surface Engineering Research Institute, Kanto Gakuin University, Kanazawa-ku, Yokohama 236-0004 (Japan)
  3. (Japan)
Publication Date:
OSTI Identifier:
22314485
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINATES; EPITAXY; LANTHANUM OXIDES; LAYERS; STRONTIUM TITANATES; SUBSTRATES; THIN FILMS; X RADIATION