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Title: Fast atom diffraction from a β-Ga{sub 2}O{sub 3}(100) surface

Fast H, He atoms, and H{sub 2} molecules with projectile energies ranging from 200 eV up to 3 keV were scattered under a grazing angle of incidence from a clean and flat β-Ga{sub 2}O{sub 3}(100) surface. The bulk single crystal was grown by the Czochralski method and prepared via annealing under ultra-high vacuum conditions. For scattering along low-index directions, we observed defined diffraction patterns in the angular distributions for scattered projectiles. From the analysis of diffraction patterns, we derive the surface unit cell in good accord with the parameters b and c for the lattice of the bulk crystal and derive information on the termination of the surface.
Authors:
; ;  [1] ; ;  [2] ;  [3]
  1. Institut für Physik, Humboldt-Universität zu Berlin, Newtonstraße 15, D-12489 Berlin (Germany)
  2. Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, D-12489 Berlin (Germany)
  3. Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)
Publication Date:
OSTI Identifier:
22314475
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CZOCHRALSKI METHOD; DIFFRACTION; GALLIUM OXIDES; HELIUM; INCIDENCE ANGLE; MONOCRYSTALS; SURFACES