Fast atom diffraction from a β-Ga{sub 2}O{sub 3}(100) surface

Journal Article · Mon Aug 04 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4892350· OSTI ID:22314475

Busch, M.; Meyer, E.; Winter, H. ^[1]; Irmscher, K.; Galazka, Z. ^[2]; Gärtner, K. ^[3]

---

1. Institut für Physik, Humboldt-Universität zu Berlin, Newtonstraße 15, D-12489 Berlin (Germany)
2. Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, D-12489 Berlin (Germany)
3. Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

Fast H, He atoms, and H{sub 2} molecules with projectile energies ranging from 200 eV up to 3 keV were scattered under a grazing angle of incidence from a clean and flat β-Ga{sub 2}O{sub 3}(100) surface. The bulk single crystal was grown by the Czochralski method and prepared via annealing under ultra-high vacuum conditions. For scattering along low-index directions, we observed defined diffraction patterns in the angular distributions for scattered projectiles. From the analysis of diffraction patterns, we derive the surface unit cell in good accord with the parameters b and c for the lattice of the bulk crystal and derive information on the termination of the surface.

• OSTI ID: 22314475
• Journal Information: Applied Physics Letters, Vol. 105, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CZOCHRALSKI METHOD
DIFFRACTION
GALLIUM OXIDES
HELIUM
INCIDENCE ANGLE
MONOCRYSTALS
SURFACES