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Title: Electrical, optical, and material characterizations of blue InGaN light emitting diodes submitted to reverse-bias stress in water vapor condition

In this paper, we investigate degradation of InGaN/GaN light emitting diodes (LEDs) under reverse-bias operations in water vapor and dry air. To examine failure origins, electrical characterizations including current-voltage, breakdown current profiles, optical measurement, and multiple material analyses were performed. Our findings indicate that the diffusion of indium atoms in water vapor can expedite degradation. Investigation of reverse-bias stress can help provide insight into the effects of water vapor on LEDs.
Authors:
; ; ;  [1] ;  [2]
  1. Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Road, Puli, Nantou County 54561, Taiwan (China)
  2. Department of Electrical Engineering, National University of Tainan, No.33, Sec. 2, Shulin St., West Central Dist., Tainan City 70005, Taiwan (China)
Publication Date:
OSTI Identifier:
22314408
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AIR; ATOMS; BREAKDOWN; CURRENTS; DIFFUSION; ELECTRIC POTENTIAL; GALLIUM NITRIDES; INDIUM; LIGHT EMITTING DIODES; WATER VAPOR