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Title: Ferroelectric and ferromagnetic properties in BaTiO{sub 3} thin films on Si (100)

In this paper, we report on the epitaxial integration of room temperature lead-free ferroelectric BaTiO{sub 3} thin (∼1050 nm) films on Si (100) substrates by pulsed laser deposition technique through a domain matching epitaxy paradigm. We employed MgO and TiN as buffer layers to create BaTiO{sub 3}/SrRuO{sub 3}/MgO/TiN/Si (100) heterostructures. C-axis oriented and cube-on-cube epitaxial BaTiO{sub 3} is formed on Si (100) as evidenced by the in-plane and out-of-plane x-ray diffraction, and transmission electron microscopy. X-ray photoemission spectroscopic measurements show that Ti is in 4(+) state. Polarization hysteresis measurements together with Raman spectroscopy and temperature-dependent x-ray diffraction confirm the room temperature ferroelectric nature of BaTiO{sub 3}. Furthermore, laser irradiation of BaTiO{sub 3} thin film is found to induce ferromagnetic-like behavior but affects adversely the ferroelectric characteristics. Laser irradiation induced ferromagnetic properties seem to originate from the creation of oxygen vacancies, whereas the pristine BaTiO{sub 3} shows diamagnetic behavior, as expected. This work has opened up the route for the integration of room temperature lead-free ferroelectric functional oxides on a silicon platform.
Authors:
;  [1] ;  [2] ; ; ;  [3]
  1. Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States)
  2. (United States)
  3. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)
Publication Date:
OSTI Identifier:
22314399
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; EPITAXY; FERROELECTRIC MATERIALS; HYSTERESIS; LASER RADIATION; LAYERS; MAGNESIUM OXIDES; PHOTOEMISSION; POLARIZATION; PULSED IRRADIATION; SILICON; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TITANATES; X RADIATION; X-RAY DIFFRACTION