skip to main content

SciTech ConnectSciTech Connect

Title: InAs quantum dot growth on Al{sub x}Ga{sub 1−x}As by metalorganic vapor phase epitaxy for intermediate band solar cells

InAs quantum dot multilayers have been grown using Al{sub x}Ga{sub 1−x}As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.
Authors:
 [1] ;  [2] ; ;  [3] ;  [2] ; ;  [3] ;  [2] ;  [3] ;  [2] ;  [2] ; ; ;  [4]
  1. Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ (Brazil)
  2. (Brazil)
  3. Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil)
  4. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)
Publication Date:
OSTI Identifier:
22314378
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; CRYSTAL DEFECTS; GALLIUM ARSENIDES; INDIUM ARSENIDES; QUANTUM DOTS; SOLAR CELLS; SPACERS; VAPOR PHASE EPITAXY; X-RAY SPECTROSCOPY