InAs quantum dot growth on Al{sub x}Ga{sub 1−x}As by metalorganic vapor phase epitaxy for intermediate band solar cells

Journal Article · Sun Sep 07 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4894295· OSTI ID:22314378

Kawabata, R. M. S.; Souza, P. L. ^[1]; Mourão, R. T.; Pires, M. P. ^[1]; Micha, D. N. ^[1]; Xie, H.; Fischer, A. M.; Ponce, F. A. ^[2]

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1. Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil)
2. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)

InAs quantum dot multilayers have been grown using Al{sub x}Ga{sub 1−x}As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.

• OSTI ID: 22314378
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
CRYSTAL DEFECTS
GALLIUM ARSENIDES
INDIUM ARSENIDES
QUANTUM DOTS
SOLAR CELLS
SPACERS
VAPOR PHASE EPITAXY
X-RAY SPECTROSCOPY