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Title: Air-gap gating of MgZnO/ZnO heterostructures

The adaptation of “air-gap” dielectric based field-effect transistor technology to controlling the MgZnO/ZnO heterointerface confined two-dimensional electron system (2DES) is reported. We find it possible to tune the charge density of the 2DES via a gate electrode spatially separated from the heterostructure surface by a distance of 5 μm. Under static gating, the observation of the quantum Hall effect suggests that the charge carrier density remains homogeneous, with the 2DES in the 3 mm square sample the sole conductor. The availability of this technology enables the exploration of the charge carrier density degree of freedom in the pristine sample limit.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [4] ;  [1] ;  [5]
  1. Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656 (Japan)
  2. RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan)
  3. Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577 (Japan)
  4. (JST), Tokyo 102-0075 (Japan)
  5. (CEMS), Wako 351-0198 (Japan)
Publication Date:
OSTI Identifier:
22314356
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AIR; CHARGE CARRIERS; CHARGE DENSITY; DEGREES OF FREEDOM; DIELECTRIC MATERIALS; ELECTRODES; FIELD EFFECT TRANSISTORS; HALL EFFECT; SURFACES; ZINC OXIDES