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Title: Large positive magnetoresistance effects in the dilute magnetic semiconductor (Zn,Mn)Se in the regime of electron hopping

Magnetoresistance in dilute magnetic semiconductors is studied in the hopping transport regime. Measurements performed on Cl-doped Zn{sub 1–x}Mn{sub x}Se with x < 8% are compared with simulation results obtained by a hopping transport model. The energy levels of the Cl donors are affected by the magnetization of Mn atoms in their vicinity via the s-d exchange interaction. Compositional disorder, in particular, the random distribution of magnetic atoms, leads to a magnetic-field induced broadening of the donor energy distribution. As the energy distribution broadens, the electron transport is hindered and a large positive contribution to the magnetoresistance arises. This broadening of the donor energy distribution is largely sufficient to account for the experimentally observed magnetoresistance effects in n-type (Zn,Mn)Se with donor concentrations below the metal–insulator transition.
Authors:
; ; ;  [1] ;  [2] ;  [3] ; ;  [4] ;  [5]
  1. Department of Physics and Material Sciences Center, Philipps-University, D-35032 Marburg (Germany)
  2. Institute of Semiconductor Physics, 630090 Novosibirsk (Russian Federation)
  3. (Russian Federation)
  4. Institute of Experimental Physics I, Justus-Liebig-University Giessen, D-35392 Giessen (Germany)
  5. Institut für Angewandte Physik and Center for Functional Nanostructures (CFN), Universität Karlsruhe, D-76131 Karlsruhe (Germany)
Publication Date:
OSTI Identifier:
22314340
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMS; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; DOPED MATERIALS; ENERGY LEVELS; ENERGY SPECTRA; EXCHANGE INTERACTIONS; MAGNETIC FIELDS; MAGNETIC SEMICONDUCTORS; MAGNETORESISTANCE; SIMULATION; TRANSPORT THEORY