skip to main content

Title: Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K < T < 450 K). Depending on the sample, metallic or non-metallic behavior was observed. A hopping conduction mechanism with an anomalous hopping exponent was detected in the non-metallic samples. All metallic delta-doped layers exhibited the same mobility value, around 3.6 ± 0.8 cm{sup 2}/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm.
Authors:
; ; ; ; ; ; ; ;  [1] ;  [2] ; ; ; ;  [3] ; ; ;  [4] ; ; ;  [5] more »;  [6] ; « less
  1. Université Grenoble Alpes, Institut NEEL, 38042 Grenoble (France)
  2. (France)
  3. CEA, LIST, Diamond Sensors Laboratory, 91191 Gif-sur-Yvette (France)
  4. IEMN, UMR-CNRS 8520, Avenue Poincaré, Université de Lille 1, 59652 Villeneuve d'Ascq (France)
  5. Dpto Ciencia de los Materiales, Facultad de Ciencias, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain)
  6. Groupe d'Étude de la Matière Condensée (GEMaC), UMR 8635 du CNRS, UVSQ, 45 Avenue des États-Unis, 78035 Versailles Cedex (France)
Publication Date:
OSTI Identifier:
22314336
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; BORON; CARRIER DENSITY; COMPARATIVE EVALUATIONS; DIAMONDS; DOPED MATERIALS; ELLIPSOMETRY; HALL EFFECT; IMPURITIES; MASS SPECTROSCOPY; MONOCRYSTALS; NANOSTRUCTURES; SCATTERING; SUBSTRATES; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0400-1000 K; TRANSMISSION ELECTRON MICROSCOPY; X RADIATION