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Title: Localized states in a semiconductor quantum ring with a tangent wire

We extend a special kind of localized state trapped at the intersection due to the geometric confinement, first proposed in a three-terminal-opening T-shaped structure [L. A. Openov, Europhys. Lett. 55, 539 (2001)], into a ring geometry with a tangent connection to the wire. In this ring geometry, there exists one localized state trapped at the intersection with energy lying inside the lowest subband. We systematically study this localized state and the resulting Fano-type interference due to the coupling between this localized state and the continuum ones. It is found that the increase of inner radius of the ring weakens the coupling to the continuum ones and the asymmetric Fano dip fades away. A wide energy gap in transmission appears due to the interplay of two types of antiresonances: the Fano-type antiresonance and the structure antiresonance. The size of this antiresonance gap can be modulated by adjusting the magnetic flux. Moreover, a large transmission amplitude can be obtained in the same gap area. The strong robustness of the antiresonance gap is demonstrated and shows the feasibility of the proposed geometry for a real application.
Authors:
;  [1]
  1. Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)
Publication Date:
OSTI Identifier:
22314335
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AMPLITUDES; ASYMMETRY; ENERGY GAP; GEOMETRY; INTERFERENCE; MAGNETIC FLUX; SEMICONDUCTOR MATERIALS; TRANSMISSION; TRAPPING; WIRES