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Title: Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

Erbium-doped silicon-rich nitride electroluminescent thin-films emitting at 1.54 μm have been fabricated and integrated within a metal-oxide-semiconductor structure. By gradually varying the stoichiometry of the silicon nitride, we uncover the role of silicon excess on the optoelectronic properties of devices. While the electrical transport is mainly enabled in all cases by Poole-Frenkel conduction, power efficiency and conductivity are strongly altered by the silicon excess content. Specifically, the increase in silicon excess remarkably enhances the conductivity and decreases the charge trapping; however, it also reduces the power efficiency. The main excitation mechanism of Er{sup 3+} ions embedded in silicon-rich nitrides is discussed. The optimum Si excess that balances power efficiency, conductivity, and charge trapping density is found to be close to 16%.
Authors:
; ;  [1] ;  [2] ;  [3]
  1. MIND-IN2UB, Department Electrònica, Universitat de Barcelona, Martí i Franquès 1, Barcelona 08028 (Spain)
  2. Institut des Nanotechnologies de Lyon, École Centrale de Lyon, Écully 69134 (France)
  3. Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France)
Publication Date:
OSTI Identifier:
22314319
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DENSITY; DOPED MATERIALS; EFFICIENCY; ELECTROLUMINESCENCE; EQUIPMENT; ERBIUM; ERBIUM IONS; SEMICONDUCTOR MATERIALS; SILICON; SILICON NITRIDES; STOICHIOMETRY; THIN FILMS; TRAPPING