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Title: Band filling effects on temperature performance of intermediate band quantum wire solar cells

Detailed studies of solar cell efficiency as a function of temperature were performed for quantum wire intermediate band solar cells grown on the (311)A plane. A remotely doped one-dimensional intermediate band made of self-assembled In{sub 0.4}Ga{sub 0.6}As quantum wires was compared to an undoped intermediate band and a reference p-i-n GaAs sample. These studies indicate that the efficiencies of these solar cells depend on the population of the one-dimensional band by equilibrium free carriers. A change in this population by free electrons under various temperatures affects absorption and carrier transport of non-equilibrium carriers generated by incident light. This results in different efficiencies for both the doped and undoped intermediate band solar cells in comparison with the reference GaAs p-i-n solar cell device.
Authors:
; ; ; ; ;  [1] ;  [2]
  1. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
  2. Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, Arkansas 71601 (United States)
Publication Date:
OSTI Identifier:
22314318
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; CARRIERS; COMPARATIVE EVALUATIONS; DOPED MATERIALS; EFFICIENCY; GALLIUM ARSENIDES; ONE-DIMENSIONAL CALCULATIONS; QUANTUM WIRES; SOLAR CELLS; TEMPERATURE DEPENDENCE