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Title: Characterization of aluminum oxide tunnel barriers by combining transport measurements and transmission electron microscopy imaging

We present two approaches for studying the uniformity of a tunnel barrier. The first approach is based on measuring single-electron and two-electron tunneling in a hybrid single-electron transistor. Our measurements indicate that the effective area of a conduction channel is about one order of magnitude larger than predicted by theoretical calculations. With the second method, transmission electron microscopy, we demonstrate that variations in the barrier thickness are a plausible explanation for the larger effective area and an enhancement of higher order tunneling processes.
Authors:
; ; ;  [1] ; ;  [2] ;  [3] ; ;  [4] ;  [1] ;  [5]
  1. Low Temperature Laboratory (OVLL), Aalto University School of Science, P.O. Box 13500, 00076 Aalto (Finland)
  2. NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box 15100, FI-00076 Aalto (Finland)
  3. Kirchhoff-Institute for Physics, Heidelberg University, Im Neuenheimer Feld 227, D-69120 Heidelberg (Germany)
  4. COMP/Department of Applied Physics, Aalto University School of Science, P.O. Box 11100, FI-00076 Aalto, Espoo (Finland)
  5. (MIKES), P.O. Box 9, 02151 Espoo (Finland)
Publication Date:
OSTI Identifier:
22314295
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; THICKNESS; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL EFFECT