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Title: X-ray diffraction study of defects in zinc-diffusion-doped silicon

Samples of CZ n-Si〈Zn〉(111) are prepared by high-temperature zinc-diffusion annealing followed by quenching and are studied by X-ray diffraction. The silicon contains an initial phosphorus impurity and zinc-compensating admixture at concentrations N{sub P} = 1.5 × 10{sup 14} cm{sup −3} and N{sub Zn} = 1 × 10{sup 14} cm{sup −3}; i.e., the relation N{sub P}/2 < N{sub Zn} < N{sub P} is fulfilled. Microdefects are studied by double- and triple-crystal X-ray diffraction in the dispersion free modes (n, −n) and (n, −n, +n). The samples are found to contain microdefects with two characteristic sizes (average sizes of about 1 μm and 70 nm). The interplanar distance in the near-surface layer with a thickness of 0.1 μm is smaller than this parameter in the remaining matrix, the difference being equal to d{sub 0} Δd/d{sub 0} ≈ 2 × 10{sup −5}. This layer contains mainly vacancy-type microdefects. The angle between the reflecting planes and the local surface relief is Δψ = (7 ± 1) arcmin.
Authors:
 [1]
  1. Russian Academy of Sciences, Institute of Physics and Technology (Russian Federation)
Publication Date:
OSTI Identifier:
22311424
Resource Type:
Journal Article
Resource Relation:
Journal Name: Crystallography Reports; Journal Volume: 58; Journal Issue: 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Inc.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CONCENTRATION RATIO; CRYSTAL DOPING; DIFFUSION; DOPED MATERIALS; LAYERS; PHOSPHORUS; SILICON; SURFACES; VACANCIES; X-RAY DIFFRACTION; ZINC