skip to main content

SciTech ConnectSciTech Connect

Title: Strain relaxation in multilayer III–N structures on Si(111) substrates

X-ray diffractometry and X-ray scattering reciprocal space maps have been used to study strain relaxation in a complex buffer composed of seven intermediate layers of Al{sub x}Ga{sub 1−x}N composition with different values of x, decreasing with an increase in the distance from the substrate. The layers have been grown by hydride metalorganic vapor phase epitaxy on silicon and sapphire substrates. Differences in the structural quality of the first four layers of a multilayer buffer grown on different substrates have been revealed. A gradual smoothing out of these differences in the next three layers with an increase in the layer serial number has been shown. The last grown intermediate Al{sub x}Ga{sub 1−x}N layer and the GaN layer grown on it have identical thicknesses and degrees of mosaicity, regardless of the substrate type. Device structures grown on a complex buffer demonstrate emission in approximately the same wavelength range.
Authors:
; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22311423
Resource Type:
Journal Article
Resource Relation:
Journal Name: Crystallography Reports; Journal Volume: 58; Journal Issue: 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Inc.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; GALLIUM NITRIDES; LAYERS; SAPPHIRE; STRESS RELAXATION; SUBSTRATES; VAPOR PHASE EPITAXY; X-RAY DIFFRACTION