The features of X-ray topographic contrast formation in silicon with dislocation clusters

Journal Article · Sun Dec 15 00:00:00 EST 2013 · Crystallography Reports

DOI:https://doi.org/10.1134/S1063774513070080· OSTI ID:22311422

Novikov, S. N.; Fedortsov, D. G.; Struk, A. Ya.; Yaremchuk, I. V. ^[1]

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1. Yuri Fedkovych Chernivtsi National University (Ukraine)

The features of formation of diffraction images of edge dislocation sets forming clusters (of two, three and more dislocations) as well as small-angle dislocation boundaries (walls) have been studied. A variety of diffraction effects of wave fields created in strongly distorted crystals regions along dislocation lines have been observed. Various intensity interference effects of rescattering and internal reflection of the newly formed and already existing wave fields on thickness distributions of intensity for the case of presence in the same glide plane of edge dislocations with parallel and anti-parallel Burgers vectors were discovered.

• OSTI ID: 22311422
• Journal Information: Crystallography Reports, Vol. 58, Issue 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Inc.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7745
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BURGERS VECTOR
CRYSTAL DEFECTS
CRYSTALS
DIFFRACTION
EDGE DISLOCATIONS
INTERFERENCE
RESCATTERING
SILICON
X RADIATION