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Title: Analysis of synthetic diamond single crystals by X-ray topography and double-crystal diffractometry

Abstract

Structural features of diamond single crystals synthesized under high pressure and homoepitaxial films grown by chemical vapor deposition (CVD) have been analyzed by double-crystal X-ray diffractometry and topography. The conditions of a diffraction analysis of diamond crystals using Ge monochromators have been optimized. The main structural defects (dislocations, stacking faults, growth striations, second-phase inclusions, etc.) formed during crystal growth have been revealed. The nitrogen concentration in high-pressure/high-temperature (HPHT) diamond substrates is estimated based on X-ray diffraction data. The formation of dislocation bundles at the film-substrate interface in the epitaxial structures has been revealed by plane-wave topography; these dislocations are likely due to the relaxation of elastic macroscopic stresses caused by the lattice mismatch between the substrate and film. The critical thicknesses of plastic relaxation onset in CVD diamond films are calculated. The experimental techniques for studying the real diamond structure in optimizing crystal-growth technology are proven to be highly efficient.

Authors:
; ; ;  [1]; ; ; ;  [2]
  1. Russian Academy of Sciences, Prokhorov General Physics Institute (Russian Federation)
  2. National Research Centre “Kurchatov Institute” (Russian Federation)
Publication Date:
OSTI Identifier:
22311418
Resource Type:
Journal Article
Journal Name:
Crystallography Reports
Additional Journal Information:
Journal Volume: 58; Journal Issue: 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Inc.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7745
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DIAMONDS; EPITAXY; MONOCRYSTALS; X RADIATION; X-RAY DIFFRACTION

Citation Formats

Prokhorov, I. A., E-mail: igor.prokhorov@mail.ru, Ralchenko, V. G., Bolshakov, A. P., Polskiy, A. V., Vlasov, A. V., Subbotin, I. A., Podurets, K. M., Pashaev, E. M., and Sozontov, E. A. Analysis of synthetic diamond single crystals by X-ray topography and double-crystal diffractometry. United States: N. p., 2013. Web. doi:10.1134/S1063774513070146.
Prokhorov, I. A., E-mail: igor.prokhorov@mail.ru, Ralchenko, V. G., Bolshakov, A. P., Polskiy, A. V., Vlasov, A. V., Subbotin, I. A., Podurets, K. M., Pashaev, E. M., & Sozontov, E. A. Analysis of synthetic diamond single crystals by X-ray topography and double-crystal diffractometry. United States. https://doi.org/10.1134/S1063774513070146
Prokhorov, I. A., E-mail: igor.prokhorov@mail.ru, Ralchenko, V. G., Bolshakov, A. P., Polskiy, A. V., Vlasov, A. V., Subbotin, I. A., Podurets, K. M., Pashaev, E. M., and Sozontov, E. A. 2013. "Analysis of synthetic diamond single crystals by X-ray topography and double-crystal diffractometry". United States. https://doi.org/10.1134/S1063774513070146.
@article{osti_22311418,
title = {Analysis of synthetic diamond single crystals by X-ray topography and double-crystal diffractometry},
author = {Prokhorov, I. A., E-mail: igor.prokhorov@mail.ru and Ralchenko, V. G. and Bolshakov, A. P. and Polskiy, A. V. and Vlasov, A. V. and Subbotin, I. A. and Podurets, K. M. and Pashaev, E. M. and Sozontov, E. A.},
abstractNote = {Structural features of diamond single crystals synthesized under high pressure and homoepitaxial films grown by chemical vapor deposition (CVD) have been analyzed by double-crystal X-ray diffractometry and topography. The conditions of a diffraction analysis of diamond crystals using Ge monochromators have been optimized. The main structural defects (dislocations, stacking faults, growth striations, second-phase inclusions, etc.) formed during crystal growth have been revealed. The nitrogen concentration in high-pressure/high-temperature (HPHT) diamond substrates is estimated based on X-ray diffraction data. The formation of dislocation bundles at the film-substrate interface in the epitaxial structures has been revealed by plane-wave topography; these dislocations are likely due to the relaxation of elastic macroscopic stresses caused by the lattice mismatch between the substrate and film. The critical thicknesses of plastic relaxation onset in CVD diamond films are calculated. The experimental techniques for studying the real diamond structure in optimizing crystal-growth technology are proven to be highly efficient.},
doi = {10.1134/S1063774513070146},
url = {https://www.osti.gov/biblio/22311418}, journal = {Crystallography Reports},
issn = {1063-7745},
number = 7,
volume = 58,
place = {United States},
year = {Sun Dec 15 00:00:00 EST 2013},
month = {Sun Dec 15 00:00:00 EST 2013}
}