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Title: Modification of the crystal structure of gadolinium gallium garnet by helium ion irradiation

The structure of gadolinium gallium garnet (GGG) single crystals before and after implantation by He{sup +} ions has been investigated using high-resolution X-ray diffraction methods and the generalized dynamic theory of X-ray scattering. The main types of growth defects in GGG single crystals and radiation-induced defects in the ion-implanted layer have been determined. It is established that the concentration of dislocation loops in the GGG surface layer modified by ion implantation increases and their radius decreases with an increase in the implantation dose.
Authors:
; ; ; ; ;  [1] ;  [2] ;  [3]
  1. Vasyl Stefanyk Precarpathian National University (Ukraine)
  2. Fedkovych State University (Ukraine)
  3. National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)
Publication Date:
OSTI Identifier:
22311417
Resource Type:
Journal Article
Resource Relation:
Journal Name: Crystallography Reports; Journal Volume: 58; Journal Issue: 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Inc.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL DEFECTS; CRYSTAL GROWTH; GADOLINIUM; GADOLINIUM COMPOUNDS; GALLIUM; HELIUM IONS; LAYERS; MONOCRYSTALS; X-RAY DIFFRACTION