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Title: Influence of the chemical nature of implanted ions on the structure of a silicon layer damaged by implantation

The influence of the implantation of silicon single crystals by fluorine, nitrogen, oxygen, and neon ions on the distribution of strain and the static Debye-Waller factor in the crystal lattice over the implanted-layer depth has been investigated by high-resolution X-ray diffraction. The density depth distribution in the surface layer of native oxide has been measured by X-ray reflectometry. Room-temperature implantation conditions have ensured the equality of the suggested ranges of ions of different masses and the energies transferred by them to the target. It is convincingly shown that the change in the structural parameters of the radiation-damaged silicon layer and the native oxide layer depend on the chemical activity of the implanted ions.
Authors:
; ;  [1] ; ; ; ;  [2]
  1. National University of Science and Technology “MISIS” (Russian Federation)
  2. Russian Academy of Sciences, Institute of Microelectronic Technology and Ultra-High-Purity Materials (Russian Federation)
Publication Date:
OSTI Identifier:
22311415
Resource Type:
Journal Article
Resource Relation:
Journal Name: Crystallography Reports; Journal Volume: 58; Journal Issue: 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Inc.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC DISPLACEMENTS; CRYSTAL LATTICES; FLUORINE; LAYERS; MONOCRYSTALS; NEON IONS; NITROGEN; OXIDES; OXYGEN; SILICON; SPATIAL DISTRIBUTION; X-RAY DIFFRACTION