Atomistic characterization of SAM coatings as gate insulators in Si-based FET devices

Journal Article · Thu Jun 19 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4883036· OSTI ID:22311373

Gala, F. ^[1]; Zollo, G. ^[2]

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1. Universitá di Roma La Sapienza, Via Scarpa 14-16, 00161 Rome (Italy)
2. Universitá di Roma La Sapienza', Via Scarpa 14-16, 00161 Rome (Italy)

Many nano-material systems are currently under consideration as possible candidates for gate dielectric insulators in both metal-oxide-semiconductor (MOSFET) and organic (OFET) field-effect transistors. In this contribution, the possibility of employing self-assembled monolayers (SAMs) of hydroxylated octadecyltrichlorosilane (OTS) chains on a (111) Si substrate as gate dielectrics is discussed; in particular ab initio theoretical simulations have been employed to study the structural properties, work function modifications, and the insulating properties of OTS thin film coatings on Si substrates.

• OSTI ID: 22311373
• Journal Information: AIP Conference Proceedings, Vol. 1603, Issue 1; Conference: Nanoforum 2013, Rome (Italy), 18-20 Sep 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COATINGS
COMPUTERIZED SIMULATION
DIELECTRIC MATERIALS
MODIFICATIONS
MOSFET
NANOSTRUCTURES
OXIDES
SEMICONDUCTOR MATERIALS
SILANES
SILICON
SUBSTRATES
THIN FILMS
WORK FUNCTIONS