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Title: Atomistic characterization of SAM coatings as gate insulators in Si-based FET devices

Many nano-material systems are currently under consideration as possible candidates for gate dielectric insulators in both metal-oxide-semiconductor (MOSFET) and organic (OFET) field-effect transistors. In this contribution, the possibility of employing self-assembled monolayers (SAMs) of hydroxylated octadecyltrichlorosilane (OTS) chains on a (111) Si substrate as gate dielectrics is discussed; in particular ab initio theoretical simulations have been employed to study the structural properties, work function modifications, and the insulating properties of OTS thin film coatings on Si substrates.
Authors:
 [1] ;  [2]
  1. Universit√° di Roma La Sapienza, Via Scarpa 14-16, 00161 Rome (Italy)
  2. Universit√° di Roma La Sapienza', Via Scarpa 14-16, 00161 Rome (Italy)
Publication Date:
OSTI Identifier:
22311373
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1603; Journal Issue: 1; Conference: Nanoforum 2013, Rome (Italy), 18-20 Sep 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COATINGS; COMPUTERIZED SIMULATION; DIELECTRIC MATERIALS; MODIFICATIONS; MOSFET; NANOSTRUCTURES; OXIDES; SEMICONDUCTOR MATERIALS; SILANES; SILICON; SUBSTRATES; THIN FILMS; WORK FUNCTIONS