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Title: Generation of spin-polarized currents via cross-relaxation with dynamically pumped paramagnetic impurities

Key to future spintronics and spin-based information processing technologies is the generation, manipulation, and detection of spin polarization in a solid state platform. Here, we theoretically explore an alternative route to spin injection via the use of dynamically polarized nitrogen-vacancy (NV) centers in diamond. We focus on the geometry where carriers and NV centers are confined to proximate, parallel layers and use a “trap-and-release” model to calculate the spin cross-relaxation probabilities between the charge carriers and neighboring NV centers. We identify near-unity regimes of carrier polarization depending on the NV spin state, applied magnetic field, and carrier g-factor. In particular, we find that unlike holes, electron spins are distinctively robust against spin-lattice relaxation by other, unpolarized paramagnetic centers. Further, the polarization process is only weakly dependent on the carrier hopping dynamics, which makes this approach potentially applicable over a broad range of temperatures.
Authors:
 [1] ;  [2]
  1. Department of Physics, CUNY-City College of New York, New York, New York 10031 (United States)
  2. Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)
Publication Date:
OSTI Identifier:
22311355
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; CHARGE CARRIERS; COMPUTERIZED SIMULATION; CURRENTS; DETECTION; DIAMONDS; IMPURITIES; INJECTION; LANDE FACTOR; LAYERS; MAGNETIC FIELDS; NITROGEN COMPLEXES; PARAMAGNETISM; POLARIZATION; PROBABILITY; SOLIDS; SPIN ORIENTATION; SPIN-LATTICE RELAXATION; TRAPS; VACANCIES