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Title: Charge transport and memristive properties of graphene quantum dots embedded in poly(3-hexylthiophene) matrix

We show that graphene quantum dots (GQD) embedded in a semiconducting poly(3-hexylthiophene) polymeric matrix act as charge trapping nanomaterials. In plane current-voltage (I-V) measurements of thin films realized from this nanocomposite deposited on gold interdigitated electrodes revealed that the GQD enhanced dramatically the hole transport. I-V characteristics exhibited a strong nonlinear behavior and a pinched hysteresis loop, a signature of a memristive response. The transport properties of this nanocomposite were explained in terms of a trap controlled space charge limited current mechanism.
Authors:
; ; ; ; ;  [1] ;  [1] ;  [2]
  1. National Institute for R and D in Microtechnologies, 72996, Bucharest (Romania)
  2. (Romania)
Publication Date:
OSTI Identifier:
22311350
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CHARGE TRANSPORT; CURRENTS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; GOLD; GRAPHENE; HYSTERESIS; MATRIX MATERIALS; NANOCOMPOSITES; NONLINEAR PROBLEMS; QUANTUM DOTS; SPACE CHARGE; THIN FILMS; TRAPPING