skip to main content

Title: Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors

With this paper we propose a test method for evaluating the dynamic performance of GaN-based transistors, namely, gate-frequency sweep measurements: the effectiveness of the method is verified by characterizing the dynamic performance of Gate Injection Transistors. We demonstrate that this method can provide an effective description of the impact of traps on the transient performance of Heterojunction Field Effect Transistors, and information on the properties (activation energy and cross section) of the related defects. Moreover, we discuss the relation between the results obtained by gate-frequency sweep measurements and those collected by conventional drain current transients and double pulse characterization.
Authors:
; ; ;  [1] ; ;  [2]
  1. Department of Information Engineering, University of Padua, via Gradenigo 6/B, Padova 35131 (Italy)
  2. Panasonic Corporation, Semiconductor Device Research Center, SDRC, 1 Kotari-yakemachi, Nagaokakyio City, Kyoto 317-8520 (Japan)
Publication Date:
OSTI Identifier:
22311348
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ALUMINIUM COMPOUNDS; CROSS SECTIONS; CRYSTAL DEFECTS; CURRENTS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDES; HETEROJUNCTIONS; TRANSIENTS; TRAPS