skip to main content

Title: Modeling of microstructural effects on electromigration failure

Current electromigration models used for simulation and analysis of interconnect reliability lack the appropriate description of metal microstructure and consequently have a very limited predictive capability. Therefore, the main objective of our work was obtaining more sophisticated electromigration tools. The problem is addressed through a combination of different levels of atomistic modeling and already available, continuum level macroscopic models. A novel method for an ab initio calculation of the effective valence for electromigration is presented and its application on the analysis of EM behavior is demonstrated. Additionally, a simple analytical model for the early electromigration lifetime is obtained. We have shown that its application provides a reasonable estimate for the early electromigration failures including the effect of microstructure. A simulation study is also applied on electromigration failure in tin solder bumps, where it contributed the understanding of the role of tin crystal anisotropy in the degradation mechanism of solder bumps.
Authors:
 [1] ; ; ;  [2]
  1. Christian Doppler Laboratory for Reliability Issues in Microelectronics at the Institute for Microelectronics, TU Wien (Austria)
  2. Institute for Microelectronics, TU Wien, Gußhausstraße 27-29, A-1040 Wien (Austria)
Publication Date:
OSTI Identifier:
22311266
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1601; Journal Issue: 1; Conference: International conference on stress induced phenomena and reliability in 3D microelectronics, Kyoto (Japan), 28-30 May 2012; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; CRYSTALS; ELECTROPHORESIS; LIFETIME; MATHEMATICAL MODELS; MICROSTRUCTURE; RELIABILITY; TIN; VALENCE