skip to main content

SciTech ConnectSciTech Connect

Title: Physics-based simulation of EM and SM in TSV-based 3D IC structures

Evolution of stresses in through-silicon-vias (TSVs) and in the TSV landing pad due to the stress migration (SM) and electromigration (EM) phenomena are considered. It is shown that an initial stress distribution existing in a TSV depends on its architecture and copper fill technology. We demonstrate that in the case of proper copper annealing the SM-induced redistribution of atoms results in uniform distributions of the hydrostatic stress and concentration of vacancies along each segment. In this case, applied EM stressing generates atom migration that is characterized by kinetics depending on the preexisting equilibrium concentration of vacancies. Stress-induced voiding in TSV is considered. EM induced voiding in TSV landing pad is analyzed in details.
Authors:
 [1] ;  [2] ;  [3]
  1. Mentor Graphics Corp., 0012 Yerevan (Armenia)
  2. Mentor Graphics Corp., Fremont, CA 94538 (United States)
  3. Fraunhofer Institute for Nondestructive Testing IZFP, D-01109 Dresden (Germany)
Publication Date:
OSTI Identifier:
22311259
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1601; Journal Issue: 1; Conference: International conference on stress induced phenomena and reliability in 3D microelectronics, Kyoto (Japan), 28-30 May 2012; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; ATOMS; CONCENTRATION RATIO; COPPER; ELECTROPHORESIS; EQUILIBRIUM; SILICON; STRESSES; VACANCIES