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Title: High mobility ZnO nanowires for terahertz detection applications

An oxide nanowire material was utilized for terahertz detection purpose. High quality ZnO nanowires were synthesized and field-effect transistors were fabricated. Electrical transport measurements demonstrated the nanowire with good transfer characteristics and fairly high electron mobility. It is shown that ZnO nanowires can be used as building blocks for the realization of terahertz detectors based on a one-dimensional plasmon detection configuration. Clear terahertz wave (∼0.3 THz) induced photovoltages were obtained at room temperature with varying incidence intensities. Further analysis showed that the terahertz photoresponse is closely related to the high electron mobility of the ZnO nanowire sample, which suggests that oxide nanoelectronics may find useful terahertz applications.
Authors:
 [1] ;  [2] ; ;  [3] ;  [1]
  1. State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-Sen University, Guangdong, Guangzhou 510275 (China)
  2. (China)
  3. State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Sichuan, Mianyang 621010 (China)
Publication Date:
OSTI Identifier:
22311227
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CONFIGURATION; DETECTION; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; NANOELECTRONICS; NANOWIRES; ONE-DIMENSIONAL CALCULATIONS; QUANTUM WIRES; TEMPERATURE RANGE 0273-0400 K; THZ RANGE; ZINC OXIDES