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Title: Light-induced hysteresis and recovery behaviors in photochemically activated solution-processed metal-oxide thin-film transistors

In this report, photo-induced hysteresis, threshold voltage (V{sub T}) shift, and recovery behaviors in photochemically activated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are investigated. It was observed that a white light illumination caused negative V{sub T} shift along with creation of clockwise hysteresis in electrical characteristics which can be attributed to photo-generated doubly ionized oxygen vacancies at the semiconductor/gate dielectric interface. More importantly, the photochemically activated IGZO TFTs showed much reduced overall V{sub T} shift compared to thermally annealed TFTs. Reduced number of donor-like interface states creation under light illumination and more facile neutralization of ionized oxygen vacancies by electron capture under positive gate potential are claimed to be the origin of the less V{sub T} shift in photochemically activated TFTs.
Authors:
;  [1] ;  [2] ;  [3]
  1. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756 (Korea, Republic of)
  2. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
  3. (SAINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22311225
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; COMPARATIVE EVALUATIONS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRON CAPTURE; GALLIUM OXIDES; ILLUMINANCE; INDIUM OXIDES; INTERFACES; MOS TRANSISTORS; PHOTOCHEMISTRY; SEMICONDUCTOR MATERIALS; THIN FILMS; VISIBLE RADIATION; ZINC OXIDES