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Title: On plasmon-induced photocurrent and doping of metal-patterned graphene

Patterning graphene with noble metal plasmonic nanostructures to enhance and to manipulate the optical and electronic properties of graphene promises a variety of technological innovations in the field of nano-optoelectronics. In this report, we briefly revisit photoconduction experiments done recently on graphene plasmonic sensors and show that the excess electrical current generated in response to spatially non-uniform optical excitation is primarily induced by a photo-thermo-electric effect in the graphene itself. As this mechanism has nothing to do with the excess free carrier generation common with conventional semiconductors, the plasmonic nanostructures cannot be utilized to regulate the free carrier density and doping of graphene, in contrast to what has been proposed recently.
Authors:
;  [1]
  1. Department of Electrical Engineering and Computer Science, University of Wisconsin-Milwaukee, Milwaukee, Wisconsin 53201 (United States)
Publication Date:
OSTI Identifier:
22311216
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CARRIER DENSITY; CARRIERS; ELECTRIC CURRENTS; EXCITATION; GRAPHENE; METALS; NANOELECTRONICS; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS