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Title: Inversion layer on the Ge(001) surface from the four-probe conductance measurements

We report four-probe conductance measurements with sub-micron resolution on atomically clean Ge(001) surfaces. A qualitative difference between n-type and p-type crystals is observed. The scaling behavior of the resistance on n-type samples indicates two-dimensional current flow, while for the p-type crystal a three-dimensional description is appropriate. We interpret this in terms of the formation of an inversion layer at the surface. This result points to the surface states, i.e., dangling bonds, as the driving force behind band bending in germanium. It also explains the intrinsic character of band bending in germanium.
Authors:
; ; ; ;  [1]
  1. Center for Nanometer-Scale Science and Advanced Materials (NANOSAM), Faculty of Physics, Astronomy and Applied Computer Science, Jagiellonian University, ul. W. Reymonta 4, 30-059 Krakow (Poland)
Publication Date:
OSTI Identifier:
22311201
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BENDING; CRYSTALS; CURRENTS; ELECTRIC CONDUCTIVITY; GERMANIUM; LAYERS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; RESOLUTION; SURFACES; TWO-DIMENSIONAL CALCULATIONS