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Title: Linear temperature behavior of thermopower and strong electron-electron scattering in thick F-doped SnO{sub 2} films

Both the semi-classical and quantum transport properties of F-doped SnO{sub 2} thick films (∼1 μm) were investigated experimentally. We found that the resistivity caused by the thermal phonons obeys Bloch-Grüneisen law from ∼90 to 300 K, while only the diffusive thermopower, which varies linearly with temperature from 300 down to 10 K, can be observed. The phonon-drag thermopower is completely suppressed due to the long electron-phonon relaxation time in the compound. These observations, together with the fact that the carrier concentration has negligible temperature dependence, indicate that the conduction electrons in F-doped SnO{sub 2} films possess free-electron-like characteristics. At low temperatures, the electron-electron scattering dominates over the electron-phonon scattering and governs the inelastic scattering process. The theoretical predications of scattering rates of large- and small-energy-transfer electron-electron scattering processes, which are negligibly weak in three-dimensional disordered conventional conductors, are quantitatively tested in this lower carrier concentration and free-electron-like highly degenerate semiconductor.
Authors:
;  [1]
  1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, Tianjin University, Tianjin 300072 (China)
Publication Date:
OSTI Identifier:
22311200
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIERS; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRON-ELECTRON INTERACTIONS; ENERGY TRANSFER; FILMS; FLUORINE ADDITIONS; INELASTIC SCATTERING; RELAXATION TIME; SEMICONDUCTOR MATERIALS; STRONG INTERACTIONS; TEMPERATURE DEPENDENCE; THREE-DIMENSIONAL CALCULATIONS; TIN OXIDES