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Title: Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer

We describe a CZTSSe (Cu{sub 2}ZnSn(S{sub 1−x},Se{sub x}){sub 4}) photovoltaic (PV) device with an ALD (atomic layer deposition) coated buffer dielectric layer for CZTSSe surface passivation. An ALD buffer layer, such as TiO{sub 2}, can be applied in order to reduce the interface recombination and improve the device's open-circuit voltage. Detailed characterization data including current-voltage, admittance spectroscopy, and capacitance profiling are presented in order to compare the performance of PV devices with and without the ALD layer.
Authors:
; ; ; ; ; ; ;  [1]
  1. DuPont Central Research and Development, Wilmington, Delaware 19880 (United States)
Publication Date:
OSTI Identifier:
22311199
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BUFFERS; CAPACITANCE; COPPER COMPOUNDS; CURRENTS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; INTERFACES; LAYERS; PASSIVATION; PHOTOVOLTAIC EFFECT; RECOMBINATION; SELENIUM COMPOUNDS; SPECTROSCOPY; SULFUR COMPOUNDS; SURFACES; TIN COMPOUNDS; TITANIUM OXIDES; ZINC COMPOUNDS