Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer

Wu, Wei; Cao, Yanyan; Caspar, Jonathan V.; Guo, Qijie; Johnson, Lynda K.; Mclean, Robert S.; Malajovich, Irina; Choudhury, Kaushik Roy

doi:10.1063/1.4891852

Title: Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer

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Abstract

We describe a CZTSSe (Cu{sub 2}ZnSn(S{sub 1−x},Se{sub x}){sub 4}) photovoltaic (PV) device with an ALD (atomic layer deposition) coated buffer dielectric layer for CZTSSe surface passivation. An ALD buffer layer, such as TiO{sub 2}, can be applied in order to reduce the interface recombination and improve the device's open-circuit voltage. Detailed characterization data including current-voltage, admittance spectroscopy, and capacitance profiling are presented in order to compare the performance of PV devices with and without the ALD layer.

Authors:

Wu, Wei; Cao, Yanyan; Caspar, Jonathan V.; Guo, Qijie; Johnson, Lynda K.; Mclean, Robert S.; Malajovich, Irina; Choudhury, Kaushik Roy ^[1]

DuPont Central Research and Development, Wilmington, Delaware 19880 (United States)

Publication Date:: Mon Jul 28 00:00:00 EDT 2014

OSTI Identifier:: 22311199

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 105; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BUFFERS; CAPACITANCE; COPPER COMPOUNDS; CURRENTS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; INTERFACES; LAYERS; PASSIVATION; PHOTOVOLTAIC EFFECT; RECOMBINATION; SELENIUM COMPOUNDS; SPECTROSCOPY; SULFUR COMPOUNDS; SURFACES; TIN COMPOUNDS; TITANIUM OXIDES; ZINC COMPOUNDS

Citation Formats


                    Wu, Wei, Cao, Yanyan, Caspar, Jonathan V., Guo, Qijie, Johnson, Lynda K., Mclean, Robert S., Malajovich, Irina, and Choudhury, Kaushik Roy. Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4891852.

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                    Wu, Wei, Cao, Yanyan, Caspar, Jonathan V., Guo, Qijie, Johnson, Lynda K., Mclean, Robert S., Malajovich, Irina, & Choudhury, Kaushik Roy. Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer.  United States.  https://doi.org/10.1063/1.4891852

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                    Wu, Wei, Cao, Yanyan, Caspar, Jonathan V., Guo, Qijie, Johnson, Lynda K., Mclean, Robert S., Malajovich, Irina, and Choudhury, Kaushik Roy. 2014.  
        "Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer".  United States.  https://doi.org/10.1063/1.4891852.

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@article{osti_22311199,

  title        = {Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer},

  author       = {Wu, Wei and Cao, Yanyan and Caspar, Jonathan V. and Guo, Qijie and Johnson, Lynda K. and Mclean, Robert S. and Malajovich, Irina and Choudhury, Kaushik Roy},

  abstractNote = {We describe a CZTSSe (Cu{sub 2}ZnSn(S{sub 1−x},Se{sub x}){sub 4}) photovoltaic (PV) device with an ALD (atomic layer deposition) coated buffer dielectric layer for CZTSSe surface passivation. An ALD buffer layer, such as TiO{sub 2}, can be applied in order to reduce the interface recombination and improve the device's open-circuit voltage. Detailed characterization data including current-voltage, admittance spectroscopy, and capacitance profiling are presented in order to compare the performance of PV devices with and without the ALD layer.},

  doi          = {10.1063/1.4891852},

  url          = {https://www.osti.gov/biblio/22311199},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 4,

  volume       = 105,

  place        = {United States},

  year         = {Mon Jul 28 00:00:00 EDT 2014},

  month        = {Mon Jul 28 00:00:00 EDT 2014}

}

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