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Title: Electron and hole drift mobility measurements on thin film CdTe solar cells

We report electron and hole drift mobilities in thin film polycrystalline CdTe solar cells based on photocarrier time-of-flight measurements. For a deposition process similar to that used for high-efficiency cells, the electron drift mobilities are in the range of 10{sup −1}–10{sup 0} cm{sup 2}/V s, and holes are in the range of 10{sup 0}–10{sup 1} cm{sup 2}/V s. The electron drift mobilities are about a thousand times smaller than those measured in single crystal CdTe with time-of-flight; the hole mobilities are about ten times smaller. Cells were examined before and after a vapor phase treatment with CdCl{sub 2}; treatment had little effect on the hole drift mobility, but decreased the electron mobility. We are able to exclude bandtail trapping and dispersion as a mechanism for the small drift mobilities in thin film CdTe, but the actual mechanism reducing the mobilities from the single crystal values is not known.
Authors:
; ;  [1] ; ;  [2]
  1. Department of Physics, Syracuse University, Syracuse, New York 13244-1130 (United States)
  2. First Solar, Inc., 1035 Walsh Ave, Santa Clara, California 95050 (United States)
Publication Date:
OSTI Identifier:
22311198
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM CHLORIDES; CADMIUM TELLURIDES; DEPOSITION; DISPERSIONS; EFFICIENCY; ELECTRON DRIFT; ELECTRON MOBILITY; ELECTRONS; HOLE MOBILITY; MONOCRYSTALS; PHOTOCONDUCTIVITY; POLYCRYSTALS; SOLAR CELLS; THIN FILMS; TIME-OF-FLIGHT METHOD; TRAPPING