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Title: In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC

Using the fine control of an electron beam (e-beam) in scanning electron microscopy with the capabilities of both electrical and optical imaging, the stacking fault (SF) formation together with its tuning of carrier lifetime was in situ monitored and investigated in p-type 4H-SiC homoepitaxial films. The SFs were formed through engineering basal plane dislocations with the energy supplied by the e-beam. The e-beam intensity required for the SF formation in the p-type films was ∼100 times higher than that in the n-type ones. The SFs reduced the minority-carrier lifetime in the p-type films, which was opposite to that observed in the n-type case. The reason for the peculiar SF behavior in the p-type 4H-SiC is discussed with the cathodoluminescence results.
Authors:
; ; ;  [1] ; ;  [2]
  1. National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan)
  2. National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)
Publication Date:
OSTI Identifier:
22311196
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARBITRATION; AVAILABILITY; CARRIER LIFETIME; CATHODOLUMINESCENCE; CONTROL; DISLOCATIONS; DISPUTE SETTLEMENTS; ELECTRON BEAMS; FILMS; P-TYPE CONDUCTORS; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDES; STACKING FAULTS; TUNING