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Title: Local stress-induced effects on AlGaAs/AlOx oxidation front shape

The lateral oxidation of thick AlGaAs layers (>500 nm) is studied. An uncommon shape of the oxide tip is evidenced and attributed to the embedded stress distribution, inherent to the oxidation reaction. Experimental and numerical studies of the internal strain in oxidized Al{sub x}Ga{sub 1−x}As/GaAs structures were carried out by dark-field electron holography and finite element methods. A mapping of the strain distribution around the AlGaAs/oxide interface demonstrates the main role of internal stress on the shaping of the oxide front. These results demonstrate the high relevance of strain in oxide-confined III-V devices, in particular, with over-500-nm thick AlOx confinement layers.
Authors:
; ; ; ;  [1] ;  [2] ;  [3] ;  [2]
  1. CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse (France)
  2. (France)
  3. Univ de Toulouse, UPS, LAAS, F-31400 Toulouse (France)
Publication Date:
OSTI Identifier:
22311190
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; ALUMINIUM COMPOUNDS; ALUMINIUM OXIDES; DISTRIBUTION; ELECTRONS; FINITE ELEMENT METHOD; GALLIUM ARSENIDES; HOLOGRAPHY; INTERFACES; LAYERS; NUMERICAL ANALYSIS; OXIDATION; RESIDUAL STRESSES; STRAINS; X-RAY SPECTROSCOPY