Observation of atomic ordering of triple-period-A and -B type in GaAsBi

Wu, Mingjian; Luna, Esperanza; Trampert, Achim; Puustinen, Janne; Guina, Mircea

doi:10.1063/1.4891854

Title: Observation of atomic ordering of triple-period-A and -B type in GaAsBi

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Abstract

We report the observation of atomic ordering of triple-period (TP)-A and -B type in low temperature (LT) grown GaAsBi alloy using transmission electron microscopy (TEM). In addition to previous reports, where only TP-A ordering was identified in III-V alloys, here, we confirm by electron diffraction, high-resolution (HR) TEM, and HR Z-contrast scanning TEM that two ordering variants coexists for LT-GaAsBi. We find that the TP-A ordering variant dominates over the TP-B variant. TP-A domains extend over 50–100 nm (projected lateral width) and are of higher perfection compared to TP-B domains. HR Z-contrast scanning TEM on different domains reveals a variation in the Bi occupancy in the (111) planes with triple period sequence. Since the formation of ordered phases has been directly linked to the occurrence of specific surface reconstructions, our results suggest a correlation between the TP-A and B type domains and the multiple stability of n × 3 and 3 × n reconstructions on the (001) surface of GaAsBi under low temperature growth.

Authors:

Wu, Mingjian; Luna, Esperanza; Trampert, Achim ^[1]; Puustinen, Janne; Guina, Mircea ^[2]

Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D-10117 Berlin (Germany)
Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere (Finland)

Publication Date:: Mon Jul 28 00:00:00 EDT 2014

OSTI Identifier:: 22311189

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 105; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARSENIC COMPOUNDS; BISMUTH COMPOUNDS; CORRELATIONS; CRYSTAL GROWTH; ELECTRON DIFFRACTION; GALLIUM COMPOUNDS; RESOLUTION; STABILITY; SURFACES; TERNARY ALLOY SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats


                    Wu, Mingjian, Luna, Esperanza, Trampert, Achim, Puustinen, Janne, and Guina, Mircea. Observation of atomic ordering of triple-period-A and -B type in GaAsBi.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4891854.

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                    Wu, Mingjian, Luna, Esperanza, Trampert, Achim, Puustinen, Janne, & Guina, Mircea. Observation of atomic ordering of triple-period-A and -B type in GaAsBi.  United States.  https://doi.org/10.1063/1.4891854

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                    Wu, Mingjian, Luna, Esperanza, Trampert, Achim, Puustinen, Janne, and Guina, Mircea. 2014.  
        "Observation of atomic ordering of triple-period-A and -B type in GaAsBi".  United States.  https://doi.org/10.1063/1.4891854.

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@article{osti_22311189,

  title        = {Observation of atomic ordering of triple-period-A and -B type in GaAsBi},

  author       = {Wu, Mingjian and Luna, Esperanza and Trampert, Achim and Puustinen, Janne and Guina, Mircea},

  abstractNote = {We report the observation of atomic ordering of triple-period (TP)-A and -B type in low temperature (LT) grown GaAsBi alloy using transmission electron microscopy (TEM). In addition to previous reports, where only TP-A ordering was identified in III-V alloys, here, we confirm by electron diffraction, high-resolution (HR) TEM, and HR Z-contrast scanning TEM that two ordering variants coexists for LT-GaAsBi. We find that the TP-A ordering variant dominates over the TP-B variant. TP-A domains extend over 50–100 nm (projected lateral width) and are of higher perfection compared to TP-B domains. HR Z-contrast scanning TEM on different domains reveals a variation in the Bi occupancy in the (111) planes with triple period sequence. Since the formation of ordered phases has been directly linked to the occurrence of specific surface reconstructions, our results suggest a correlation between the TP-A and B type domains and the multiple stability of n × 3 and 3 × n reconstructions on the (001) surface of GaAsBi under low temperature growth.},

  doi          = {10.1063/1.4891854},

  url          = {https://www.osti.gov/biblio/22311189},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 4,

  volume       = 105,

  place        = {United States},

  year         = {Mon Jul 28 00:00:00 EDT 2014},

  month        = {Mon Jul 28 00:00:00 EDT 2014}

}

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