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Title: Intense femtosecond photoexcitation of bulk and monolayer MoS{sub 2}

The effect of femtosecond laser irradiation on bulk and single-layer MoS{sub 2} on silicon oxide is studied. Optical, field emission scanning electron microscopy and Raman microscopy were used to quantify the damage. The intensity of A{sub 1g} and E{sub 2g}{sup 1} vibrational modes was recorded as a function of the number of irradiation pulses. The observed behavior was attributed to laser-induced bond breaking and subsequent atoms removal due to electronic excitations. The single-pulse optical damage threshold was determined for the monolayer and bulk under 800 nm and 1030 nm pulsed laser irradiation, and the role of two-photon versus one photon absorption effects is discussed.
Authors:
;  [1] ;  [2] ;  [3] ;  [4] ;  [1] ;  [2]
  1. Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH), Heraklion 71003 (Greece)
  2. (Greece)
  3. Center of Materials Technology and Photonics and Electrical Engineering Department, Technological Educational Institute (TEI) of Crete, Heraklion 71003 (Greece)
  4. Materials Science and Technology Department, University of Crete, Heraklion 71003 (Greece)
Publication Date:
OSTI Identifier:
22311180
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ATOMS; EXCITATION; FIELD EMISSION; IRRADIATION; LASER RADIATION; MOLYBDENUM SULFIDES; PHOTONS; RAMAN EFFECT; SCANNING ELECTRON MICROSCOPY; SILICON OXIDES