skip to main content

Title: Behavior of microwave-heated silicon carbide particles at frequencies of 2.0–13.5 GHz

Silicon carbide is a key material in microwave (MW) processing and is used widely as a thermal insulator and catalytic agent. In this study, we experimentally investigated the temperature dependence of the MW-absorption properties of SiC particles at frequencies of 2.0–13.5 GHz. We heated SiC particles of different sizes using MW radiation. The heating behaviors of the particles were then compared with their MW-absorption properties. The heating behavior of the particles was dependent on their radii; this result was in keeping with theoretical predictions. Furthermore, the β-SiC particles exhibited anomalous behaviors when subjected to microwave heating at temperatures of 1100 °C and higher. These behaviors were attributable to the transformation of β-SiC into the α-phase. The underlying mechanism for this transformation is discussed on the basis of the results of X-ray diffraction analysis.
Authors:
; ;  [1] ;  [2] ; ;  [3]
  1. Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, Ookayama 2-12-1, Meguro, Tokyo 152-8552 (Japan)
  2. Chubu University, 1200 Matsumoto-cho, Kasugai, Aichi 487-8501 (Japan)
  3. Kyoto University, Gokasyo, Uji, Kyoto 611-0011 (Japan)
Publication Date:
OSTI Identifier:
22311176
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; FORECASTING; GHZ RANGE; MICROWAVE HEATING; MICROWAVE RADIATION; SILICON CARBIDES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 1000-4000 K; THERMAL CONDUCTIVITY; TRANSFORMATIONS; X-RAY DIFFRACTION