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Title: Surface donor states distribution post SiN passivation of AlGaN/GaN heterostructures

In this paper, we present a physics based analytical model to describe the effect of SiN passivation on two-dimensional electron gas density and surface barrier height in AlGaN/GaN heterostructures. The model is based on an extraction technique to calculate surface donor density and surface donor level at the SiN/AlGaN interface. The model is in good agreement with the experimental results and promises to become a useful tool in advanced design and characterization of GaN based heterostructures.
Authors:
 [1] ;  [2] ;  [3]
  1. Carinthian Tech Research CTR AG, Europastra├če 4/1, Technologiepark Villach, A- 9524 Villach/St. Magdalen (Austria)
  2. (Norway)
  3. Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway)
Publication Date:
OSTI Identifier:
22311170
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; COMPUTERIZED SIMULATION; DISTRIBUTION; ELECTRON GAS; EXTRACTION; GALLIUM NITRIDES; INTERFACES; PASSIVATION; SILICON NITRIDES; SURFACES; TWO-DIMENSIONAL CALCULATIONS