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Title: Resistive switching in ultra-thin La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrRuO{sub 3} superlattices

Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved. This challenge emerges from the coupling of low dimensional individual layers with macroscopic world. Here, we report the study of the resistive switching characteristics of a hybrid structure made out of a superlattice with ultrathin layers of two ferromagnetic metallic oxides, La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) and SrRuO{sub 3} (SRO). Bipolar resistive switching memory effects are measured on these LSMO/SRO superlattices, and the observed switching is explainable by ohmic and space charge-limited conduction laws. It is evident from the endurance characteristics that the on/off memory window of the cell is greater than 14, which indicates that this cell can reliably distinguish the stored information between high and low resistance states. The findings may pave a way to the construction of devices based on nonvolatile resistive memory effects.
Authors:
 [1] ;  [2] ; ;  [1]
  1. INPAC—Institute for Nanoscale Physics and Chemistry, K.U. Leuven, Celestijnenlaan 200D, B–3001 Leuven (Belgium)
  2. (India)
Publication Date:
OSTI Identifier:
22311167
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COUPLING; ELECTRIC CONDUCTIVITY; GLOBAL ASPECTS; LANTHANUM COMPOUNDS; LAYERS; MANGANATES; MEMORY DEVICES; OXYGEN COMPOUNDS; RUTHENIUM COMPOUNDS; SPACE CHARGE; STRONTIUM COMPOUNDS; STRONTIUM OXIDES; SUPERLATTICES; SWITCHES; THIN FILMS